IRF6218S Overview
Key Features
- Static drain-source on-resistance: RDS(on)≤150mΩ(@VGS= -10V; ID= -16A)
- Advanced trench process technology
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IRF6218S |
|---|---|
| Description | P-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 248.44 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF6218S | International Rectifier | Power MOSFET |
| IRF6218SPbF | Infineon | Power MOSFET |
| IRF6218 | International Rectifier | SMPS MOSFET |
| IRF6218L | International Rectifier | Power MOSFET |
| IRF6218PBF | International Rectifier | HEXFET Power MOSFET |