IRF621 Datasheet | Inchange Semiconductor

FEATURES - Low RDS(on) - VGS Rated at ±20V - Silicon Gate for Fast Switching Speed - Rugged - Low Drive Requirements isc Product Specification - DESCRITION - Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 150 ±20 ID Drain Current-Continuous 5A IDM Drain Current-Single Plused 20 A PD Total Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 3.12 80 ℃/W ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdf Factory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise...