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IRF 620/FI-621/FI IRF 622/FI-623/FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE
IRF620 IRF620FI
IRF621 IRF621FI
IRF622 IRF622FI
IRF623 IRF623FI
Voss
200 V 200 V
150 V 150 V
200 V 200 V
150 V 150 V
Ros(on)
0.8 0 0.8 0
0.80 0.8 0
1.2 0 1.2 0
1.2 0 1.2 0
10 • 5A 4A
5A 4A
4A 3.5 A
4A 3.5 A
e 200V FOR TELECOMMUNICATION APPLICATIONS
e ULTRA FAST SWITCHING
e RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) •
e EASY DRIVE - REDUCES COST AND SIZE
TO-220
ISOWATT220
INDUSTRIAL APPLICATIONS:
e SWITCHING MODE POWER SUPPLIES
e DC SWITCH e ROBOTCS
N-channel enhancement mode POWER MaS field effect transistors. Easy drive and very fast switching times make these POWER MaS transistors ideal for high speed switching applications.
IRF621 Datasheet
