IRF6215L Datasheet | International Rectifier

.. - 91643 IRF6215S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF6215S) l Low-profile through-hole (IRF6215L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l VDSS = -150V RDS(on) = 0.29Ω ID = -13A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications....