IRF6218 Datasheet (Inchange Semiconductor)

Description

Reset switch for active clamp Reset DC-DC converters - Low gate to drain charge to reduce switching losses - SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -27 IDM Drain Current-Single Pulsed -110 PD Total Dissipation @TC=25℃ 250 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ - SYMBOL PARAMETER Rth(j-c) Channel-to-case Rth(j-a) Channel-to-ambient MAX 0.61 62 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID= -250μA RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -16A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VDS= -120V; VGS= 0V VSD Diode forward voltage Is= -16A; VGS = 0V IRF6218,IIRF6218 MIN TYP MAX UNIT -150 V -3.0 -5.0 V 0.15 Ω ±100 nA -25 μA -1.6 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.