Datasheet Details
| Part number | IRF6218 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 235.80 KB |
| Description | P-Channel MOSFET |
| Datasheet | IRF6218-INCHANGE.pdf |
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Overview: isc P-Channel MOSFET Transistor IRF6218,IIRF6218 ·.
| Part number | IRF6218 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 235.80 KB |
| Description | P-Channel MOSFET |
| Datasheet | IRF6218-INCHANGE.pdf |
|
|
|
·Reset switch for active clamp Reset DC-DC converters ·Low gate to drain charge to reduce switching losses ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -27 IDM Drain Current-Single Pulsed -110 PD Total Dissipation @TC=25℃ 250 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.61 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID= -250μA VGS(th) Gate Threshold Voltage VDS=VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRF6218 | SMPS MOSFET | International Rectifier |
|
IRF6218L | Power MOSFET | International Rectifier |
|
IRF6218PBF | HEXFET Power MOSFET | International Rectifier |
|
IRF6218S | Power MOSFET | International Rectifier |
 |
IRF6218SPbF | Power MOSFET | Infineon |
| Part Number | Description |
|---|---|
| IRF6218S | P-Channel MOSFET |
| IRF60B217 | N-Channel MOSFET |
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| IRF630N | N-Channel MOSFET |
| IRF630NL | N-Channel MOSFET |
| IRF630NS | N-Channel MOSFET |
| IRF630NSTRRPBF | N-Channel MOSFET |
| IRF640N | N-Channel MOSFET |
| IRF640NL | N-Channel MOSFET |