IRF6215S Datasheet (irf6215l/s) Hexfet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: www.DataSheet4U.com PD - 91643 IRF6215S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF6215S) l Low-profile through-hole (IRF6215L) l 175°C Operating Temperature l Fast Switching l P-Channel l.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IRF6215S
Manufacturer	International Rectifier (now Infineon)
File Size	199.04 KB
Description	(IRF6215L/S) HEXFET Power MOSFET
Datasheet	IRF6215S IRF6215L Datasheet (PDF)

General Description

l l D VDSS = -150V RDS(on) = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.

Key Features

(.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M B A M 0.5 5 (.022 ) 0.4 6 (.018 ) M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 5.

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More Datasheets from International Rectifier (now Infineon)

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