International Rectifier IRF630PBF
POWER MOSFET
| Part No. | IRF630PBF |
|---|---|
| Datasheet | IRF630PBF Download |
| Manufacturer |  International Rectifier |
| Description | POWER MOSFET |
| Buy | Stock & Price |
Lead-Free PD- 95916 IRF630PbF 1 9/27/04 IRF630PbF 2 IRF630PbF 3 IRF630PbF 4 IRF630PbF 5 IRF630PbF 6 IRF630PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations
● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer - + - -+
● dv/dt controlled by RG
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% VDD ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig -14 For N Channel HEXFETS 7 IRF630PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 10.54 (.415) 10.29 (.405) 4 3.78 (.149) 3.54 (.139) -A-...
● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer - + - -+
● dv/dt controlled by RG
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% VDD ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig -14 For N Channel HEXFETS 7 IRF630PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 10.54 (.415) 10.29 (.405) 4 3.78 (.149) 3.54 (.139) -A-...
