International Rectifier IRF6665
The IRF6665 device utilizes DirectFET TM packaging technology. The DirectFET TM package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET TM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.| Part No. | IRF6665 |
|---|---|
| Datasheet | IRF6665 Download |
| Manufacturer |  International Rectifier |
| Description | DIGITAL AUDIO MOSFET |
| Buy | Stock & Price |
FEATURES
● Latest MOSFET Silicon technology● Key parameters optimized for Class-D audio amplifier applications
● Low RDS(on) for improved efficiency
● Low Qg for better THD and improved efficiency
● Low Qrr for better THD and lower EMI
● Low package stray inductance for reduced ringing and lower EMI
● Can deliver up to 100W per channel into 8Ω with no heatsink
● Dual sided cooling compatible
● Compatible with existing surface mount technologies
● RoHS compliant containing no lead or bromide
KEY PARAMETERS
VDS 100 V RDS(on) typ. @ VGS = 10V 53 m: Qg typ. 8.7 nC RG(int) typ. 1.9 SH DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) SQ SX ST SH MQ MX MT MNDESCRIPTION
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
