Datasheet Details
| Part number | IRF6785MTRPbF |
|---|---|
| Manufacturer | IRF |
| File Size | 626.93 KB |
| Description | DIGITAL AUDIO MOSFET |
| Datasheet | IRF6785MTRPbF-IRF.pdf |
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Overview: DIGITAL AUDIO MOSFET PD - 97282 IRF6785MTRPbF Key Parameters 200 VGS = 10V 85 26 3.0 V m: nC VDS • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier RDS(on) typ. @ applications Qg typ. • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency RG(int) max • Low Qrr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 250W per channel into 8Ω Load in Half-Bridge Configuration Amplifier • Dual sided cooling patible · patible with existing surface mount technologies · RoHS pliant containing no lead or bromide MZ ·Lead-Free (Qualified up to 260°C Reflow) Applicable DirectFET Outline and Substrate Outline (see p.
| Part number | IRF6785MTRPbF |
|---|---|
| Manufacturer | IRF |
| File Size | 626.93 KB |
| Description | DIGITAL AUDIO MOSFET |
| Datasheet | IRF6785MTRPbF-IRF.pdf |
|
|
|
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.
This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRF6785MTRPBF | Digital Audio MOSFET | International Rectifier |
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