International Rectifier IRF6785MTRPbF
The IRF6785MPbF device utilizes DirectFETTM packaging technology. The DirectFETTM package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.| Part No. | IRF6785MTRPbF |
|---|---|
| Datasheet | IRF6785MTRPbF Download |
| Manufacturer |  International Rectifier |
| Description | DIGITAL AUDIO MOSFET |
| Buy | Stock & Price |
KEY PARAMETERS
200 VGS = 10V 85 26 3.0 V m: nC VDS● Latest MOSFET Silicon technology
● Key parameters optimized for Class-D audio amplifier RDS(on) typ. @ applications Qg typ.
● Low RDS(on) for improved efficiency
● Low Qg for better THD and improved efficiency RG(int) max
● Low Qrr for better THD and lower EMI
● Low package stray inductance for reduced ringing and lower EMI
● Can deliver up to 250W per channel into 8Ω Load in Half-Bridge Configuration Amplifier
● Dual sided cooling compatible
● Compatible with existing surface mount technologies
● RoHS compliant containing no lead or bromide MZ
●Lead-Free (Qualified up to 260°C Reflow) Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) SQ SX ST SH MQ MX MT MN
FEATURES
DirectFET ISOMETRIC MZDESCRIPTION
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, g...
