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IRF6785MTRPBF Datasheet Digital Audio MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: DIGITAL AUDIO MOSFET PD - 97282 IRF6785MTRPbF Key Parameters 200 VGS = 10V 85 26 3.0 V m: nC VDS • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier RDS(on) typ. @ applications Qg typ. • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency RG(int) max • Low Qrr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 250W per channel into 8Ω Load in Half-Bridge Configuration Amplifier • Dual sided cooling patible · patible with existing surface mount technologies · RoHS pliant containing no lead or bromide MZ ·Lead-Free (Qualified up to 260°C Reflow) Applicable DirectFET Outline and Substrate Outline (see p.

General Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.

This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.

Key Features

  • DirectFET™.

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