DESCRIPTION
Additional features of these HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. VDSS 50V HEXFET® Power MOSFET RDS(on) max (mW) 130@VGS = 10V 200@VGS = 4.5V ID 3.0A 1.5A S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C Continuous Drain Current, VGS @ 4.5V cContinuous Drain Current, VGS @ 4.5V Pulsed Drain Current ePower Dissipation VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage fSingle Pulse Avalanche Energy cAvalanche Current hRepetitive Avalanche Energy gPeak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Max.
International Rectifier
