IRF7103Q Datasheet PDF | International Rectifier

International Rectifier IRF7103Q

The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available G1 S2 G2 2 7 3 6 4 5 T o p V ie w SO-8 in Tape & Reel.

Part No.	IRF7103Q
Datasheet	IRF7103Q Download
Manufacturer	International Rectifier
Description	Power MOSFET
Buy	Stock & Price

APPLICATIONS

q q q IRF7103Q HEXFET® Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel Injection Power Doors, Windows & Seats Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified S1 VDSS 50V RDS(on) max (mΩ) 130@VGS = 10V 200@VGS = 4.5V ID 3.0A 1.5A Benefits q q q q q q 1 8 D1 D1 D2 D2

DESCRIPTION

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

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