Datasheet4U.com

IRF7103PBF Datasheet PDF

International Rectifier IRF7103PBF

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
Part No. IRF7103PBF
Datasheet IRF7103PBF Download
Manufacturer
International Rectifier
Description Power MOSFET
Buy Stock & Price
IRF7103PBF datasheet page 1 preview

DESCRIPTION

The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8

ABSOLUTE MAXIMUM RATINGS

ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. 3.0 2.3 10 2.0 0.016 ± 20 4.5 -55 to + 150 Units A W W/°C V V/nS °C Thermal Resistance Ratings Parameter RθJA Maximum Junction-to-Ambient „ Min. ––– Typ. ––– Max. 62.5 Units °C/W 02/09/10 IRF7103PbF

ELECTRICAL CHARACTERISTICS

@ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 50 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance...
IRF7103PBF page 2 preview IRF7103PBF page 3 preview