DESCRIPTION
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S1 G1 S2 G2 D1 D1 D2 D2 N-Ch VDSS 20V P-Ch -20V 2 7 3 6 4 5 RDS(on) 0.125Ω 0.20Ω ID 3.0A -2.5A P-CHANNEL MOSFET Top View SO-8 ABSOLUTE MAXIMUM RATINGS
Parameter N-Channel ID @ T C = 25°C ID @ T C = 70°C IDM PD @T C = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range 3.0 2.5 10 2.0 0.016 ± 20 3.0 -55 to + 150 -3.0 Max. P-Channel -2.5 -2.0 -10 Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJA Junction-to-Ambient (PCB Mount)** Min. –––– Typ. –––– Max.
International Rectifier
