DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF7313PbF HEXFET® Power MOSFET S1 1 G1 2 8 D1 7 D1 VDSS = 30V S2 3 6 D2 G2 4 5 D2 RDS(on) = 0.029Ω Top View The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 ABSOLUTE MAXIMUM RATINGS
( TA = 25°C Unless Otherwise Noted) Symbol Maximum Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA = 25°C TA = 70°C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Maximum Power Dissipation TA = 25°C TA = 70°C PD Single Pulse Avalanche Energy EAS 30 ± 20 6.5 5.2 30 2.5 2.0 1.3 82 Avalanche Current IAR 4.0 Repetitive Avalanche Energy Peak Diode Recovery dv/dt EAR dv/dt 0.20 5.8 J...
International Rectifier
