International Rectifier IRF7314PBF
Power MOSFET
| Part No. | IRF7314PBF |
|---|---|
| Datasheet | IRF7314PBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Top View SO-8ABSOLUTE MAXIMUM RATINGS
( TA = 25°C Unless Otherwise Noted) Symbol V DS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25°C TA = 70°C Maximum Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range -20 ± 12 -5.3 -4.3 -21 -2.5 2.0 1.3 150 -2.9 0.20 -5.0 -55 to + 150 A W mJ A mJ V/ ns °C Thermal Resistance Ratings Maximum Junction-to-Ambient Parameter Symbol RθJA Limit 62.5 Units °C/W 10/7/04 Free Datasheet IRF7314PbFELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V (BR)DSS RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Re...
