International Rectifier IRF7314QPBF
The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.IRF7314QPBF Specifications
- Package : SO
- Mount Type : Surface Mount
- Breakdown Voltage : -20V
- Drain-Source Resistance : 58mΩ
- Input Capacitance : 913pF
- Min Breakdown Voltage : 20V
- Terminals : 8
- Rise Time : 26ns
- Fall Time : 38ns
- Max Power Dissipation : 2.4W
- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IRF7314QPBF |
|---|---|
| Datasheet | IRF7314QPBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S1 G1 S2 G2 HEXFET® Power MOSFET VDSS -20V RDS(on) max 0.058@VGS = -4.5V 0.098@VGS = -2.7V ID -5.2A -4.42A 1 2 3 4 8 7 D1 D1 D2 D2 6 5 Top View SO-8ABSOLUTE MAXIMUM RATINGS
Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS EAS IAR EAR TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetiti...
