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IRF7314Q Datasheet PDF

International Rectifier IRF7314Q

The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
Part No. IRF7314Q
Datasheet IRF7314Q Download
Manufacturer
International Rectifier
Description Power MOSFET
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IRF7314Q datasheet page 1 preview

APPLICATIONS

● Anti-lock Braking Systems (ABS)
● Electronic Fuel Injection
● Air bag Benefits
● Advanced Process Technology
● Dual P-Channel MOSFET
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Repetitive Avalanche Allowed up to Tjmax
● Automotive [Q101] Qualified

DESCRIPTION

Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. VDSS -20V RDS(on) max 0.058@VGS = -4.5V 0.098@VGS = -2.7V ID -5.2A -4.42A S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 3 6 4 5 T o p V ie w SO-8

ABSOLUTE MAXIMUM RATINGS

Parameter...
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