DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Top View The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 ABSOLUTE MAXIMUM RATINGS
( TA = 25°C Unless Otherwise Noted) Symbol Maximum Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA = 25°C TA = 70°C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Maximum Power Dissipation TA = 25°C TA = 70°C PD Single Pulse Avalanche Energy EAS -30 ± 20 -4.9 -3.9 -30 -2.5 2.0 1.3 140 Avalanche Current IAR -2.8 Repetitive Avalanche Energy Peak Diode Recovery dv/dt EAR dv/dt 0.20 -5.0 Junction and Storage Temperature Range TJ, TSTG -55 to + 150 Units V A W mJ A mJ V/ ns °C Therm...
International Rectifier
