APPLICATIONS
P-Channel HEXFET® Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K K D D VDSS = -30V RDS(on) = 0.062Ω Schottky Vf = 0.52V 2 7 3 6 4 5 Top View DESCRIPTION
Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. SO-8 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. ABSOLUTE MAXIMUM RATINGS
( TA = 25°C Unless Otherwise Noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Pulsed Drain Current À Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range Maximum -4.7 -3.8 -38 2.0 1.3 1...
International Rectifier
