APPLICATIONS
l P-Channel HEXFET® l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint l Lead-Free DESCRIPTION
l FETKY MOSFET & Schottky Diode A A S G 1 2 3 4 8 7 6 5 TM K K D D VDSS = -30V RDS(on) = 0.062Ω Schottky Vf = 0.52V Top View Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 ABSOLUTE MAXIMUM RATINGS
( TA = 25°C Unless Otherwise Noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Pulsed Drain Current À Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Tempe...
International Rectifier
