DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. P-CHANNEL MOSFET Top View RDS(on) 0.050Ω 0.105Ω SO-8 ABSOLUTE MAXIMUM RATINGS
Parameter V DS ID @ TA = 25°C I D @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS IAR EAR VGS dv/dt TJ, TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. N-Channel 55 4.7 3.8 38 2.0 1.3 72 4.7 0.20 ± 20 5.0 -55 to + 150 -5.0 114 -3.4 P-Channel -55 -3.4 -2.7 -27 Units V A W W mJ A mJ V V/ns °C Thermal Resistance RθJA Maximum Junction-to-Ambient Parameter Typ. Max.
International Rectifier
