APPLICATIONS
l N-Channel HEXFET l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint DESCRIPTION
A 2 S 3 G 4 7 K 6 D 5 D Top View Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. VDSS = 30V RDS(on) = 0.029Ω Schottky Vf = 0.39V SO-8 ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Parameter Maximum ID @ TA = 25°C Continuous Drain Current 6.5 ID @ TA = 70°C 5.2 IDM Pulsed Drain Current À 52 PD @TA = 25°C Power Dissipation 2.0 PD @TA = 70°C 1.3 Linear Derating Factor 16 VGS dv/dt Gate-to-Source Voltage Peak Diode Recovery dv/dt Á ± 20 -5.0 TJ, TSTG Junction and Storage Temperature Range -55...
International Rectifier
