APPLICATIONS
A l N-Channel HEXFET A l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint S G l Lead-Free DESCRIPTION
FETKYä MOSFET / Schottky Diode 18 27 36 45 Top View K VDSS = 30V K D RDS(on) = 0.029Ω D Schottky Vf = 0.39V Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Parameter Maximum ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Continuous Drain Current Pulsed Drain Current À Power Dissipation Linear Derating Factor 6.5 5.2 52 2.0 1.3 16 VGS dv/dt Gate-to-Source Voltage Peak Diode Recovery dv/dt Á ± 20 -5.0 TJ, T...
International Rectifier
