DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Top View RDS(on) 0.045Ω 0.090Ω SO-8 ABSOLUTE MAXIMUM RATINGS
Parameter VSD ID @ TA = 25°C ID @ TA = 70°C I DM PD @TA = 25°C VGS dv/dt TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. N-Channel 30 5.8 4.6 46 2.5 0.02 ± 20 5.0 -55 to + 150 -5.0 P-Channel -30 -4.3 -3.4 -34 Units A W W/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Maximum Junction-to-Ambient Max. 50 Units °C/W 1 10/7/04 IRF7379PbF ELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min.
International Rectifier
