International Rectifier IRF7413ZPBF
Power MOSFET
| Part No. | IRF7413ZPBF |
|---|---|
| Datasheet | IRF7413ZPBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-FreeABSOLUTE MAXIMUM RATINGS
Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V c Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range IRF7413ZPbF VDSS 30V HEXFET® Power MOSFET RDS(on) max ID : 10m @VGS = 10V 13A S 1 S 2 S 3 G 4 AA 8 D 7 D 6 D 5 D Top View SO-8 Max. 30 ± 20 13 10 100 2.5 1.6 0.02 -55 to + 150 Units V A W W/°C °C Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead f Junction-to-Ambient Typ. ––– ––– Max. 20 50 Units °C/W Notes through are on page 10 1 05/08/08 IRF7413ZPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
