International Rectifier IRF7413Z
HEXFET Power MOSFET
| Part No. | IRF7413Z |
|---|---|
| Datasheet | IRF7413Z Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current VDSS 30V RDS(on) max 10m:@VGS = 10V ID 13A S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8ABSOLUTE MAXIMUM RATINGS
Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Max. 30 ± 20 13 10 100 2.5 1.6 0.02 -55 to + 150 Units V c A W W/°C °C Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient Typ. ––– ––– Max. 20 50 Units °C/W f Notes through are on page 10 1 6/23/03 IRF7413Z Stati...
