DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C EAS dv/dt TJ, TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max 30 ± 20 13 9.2 58 2.5 Units V c A W mW/°C mJ V/ns °C Power Dissipation Linear Derating Factor Single Pulse Avalanche Energency Peak Diode Recovery dv/dt e d 0.02 260 5.0 -55 to +150 Junction and Storage Temperature Range Thermal Resistance Ratings Symbol RθJL RθJA h Junction-to-Ambient gh Ju...
International Rectifier
