DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. IRF7413PbF HEXFET® Power MOSFET S 1 S 2 S 3 G 4 AA 8 D 7 D 6 D 5 D Top View VDSS = 30V RDS(on) = 0.011Ω SO-8 ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V c Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation EAS d Linear Derating Factor Single Pulse Avalanche Energency dv/dt e Peak Diode Recovery dv/dt TJ, TSTG Junction and Storage Temperature Range Thermal Resistance Ratings RθJL RθJA Symbol Par...
International Rectifier
