DESCRIPTION
l A A D D D D IRF7413A HEXFET® Power MOSFET 1 2 8 7 S S S G VDSS = 30V RDS(on) = 0.0135Ω 3 6 4 5 T op V iew Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS EAS dv/dt TJ,TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 12 8.4 58 2.5 0.02 ± 20 260 5.0 -55 to + 150 Units A W mW/°C V mJ V/ns °C Thermal Resistance Ratings Parameter Rθ JA Maximum Junction-to-Ambient Typ. ––– Max.
International Rectifier
