DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF7416PbF HEXFET® Power MOSFET S 1 S 2 S 3 G 4 A 8 D 7 D 6 D 5 D Top View VDSS = -30V RDS(on) = 0.02Ω The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TA = 25°C Continuous Drain Current, VGS @ -10V ID @ TA = 70°C IDM Continuous Drain Current, VGS @ -10V c Pulsed Drain Current PD @TA = 25°C Power Dissipation Linear Derating Factor VGS EAS dv/dt Gate-to-Source Voltage d Single Pulse Avalanche Energy e Peak Diode Recovery dv/dt TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter RθJA g Junction-to-Ambient Max. -10 -7.1 -45 2.5 0.02 ± 20 370 -5.0 -55 to + 150 Max.
International Rectifier
