IRF7416 Datasheet PDF | International Rectifier

International Rectifier IRF7416

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

Part No.	IRF7416
Datasheet	IRF7416 Download
Manufacturer	International Rectifier
Description	Power MOSFET
Buy	Stock & Price

DESCRIPTION

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. PD - 9.1356E IRF7416 HEXFET® Power MOSFET S1 S2 S3 G4 8 A D 7D 6D 5D Top View VDSS = -30V RDS(on) = 0.02Ω SO-8

ABSOLUTE MAXIMUM RATINGS

ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS EAS dv/dt TJ, TSTG Parameter Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ - 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -10 -7.1 -45 2.5 0.02 ± 20 370 -5.0 -55 to + 150 Units A W W/°C V mJ V/ns °C Thermal Resistance Ratings RθJA Parameter Maximum Junction-to-Ambient Typ. Max.