APPLICATIONS
Generation V Technology SO-8 Footprint HEXFET ® FETKY T M A S S G 1 A A D D D D 2 7 VDSS = 30V RDS(on) = 0.035Ω Schottky Vf = 0.42V 3 6 4 5 DESCRIPTION
Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 package is designed for vapor phrase, infra red or wave soldering techniques. To p V ie w S O -8 ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C VGS TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Junction and Storage Temperature Range Max.
International Rectifier
