APPLICATIONS
Generation V Technology SO-8 Footprint Lead-Free A S S G 1 2 3 4 8 7 A A D D D D VDSS = 30V RDS(on) = 0.035Ω Schottky Vf = 0.39V 6 5 DESCRIPTION
Top View Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS@10Và Pulsed Drain Current À Power Dissipation à Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range Maximum 5.8 4.6 46 2.0 1.3 16 ± 20 -5.0 -55 to +150 Units A W W/°C V V/ns °C...
International Rectifier
