International Rectifier IRF7455
Power MOSFET
APPLICATIONS
High Frequency DC-DC Converters with Synchronous Rectification IRF7455 HEXFET® Power MOSFET l VDSS 30V RDS(on) max 0.0075Ω ID 15A Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage and Current l S S S G 1 8 7 A A D D D D 2 3 6 4 5 T o p V ie w SO-8ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. 30 ± 12 15 12 120 2.5 1.6 0.02 -55 to + 150 Units V V A W W W/°C °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient Max. 50 Units °C/W Typical SMPS Topologies l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers 1 4/20/00 Note...