International Rectifier IRF7465
Power MOSFET
| Part No. | IRF7465 |
|---|---|
| Datasheet | IRF7465 Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
High frequency DC-DC converters IRF7465 HEXFET® Power MOSFET RDS(on) max 0.28Ω@VGS = 10V ID 1.9A l VDSS 150V Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l S S S G 1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w SO-8ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 1.9 1.5 15 2.5 0.02 ± 30 7.8 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. ––– ––– Max. 20 50 Units °C/W Notes thr...
