International Rectifier IRF7466
Power MOSFET
APPLICATIONS
l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l l l S S VDSS 30V RDS(on) max(mΩ) 12.5@VGS = 10V ID 11A 1 8 7 A A D D D D 2 Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current S G 3 6 4 5 T o p V ie w SO-8ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. 30 ± 20 11 9.0 90 2.5 1.6 0.02 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. ––– ––– Max. 20 50 Units °C/W Notes through are on page 8 1 3/25/01 IRF7466 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.