International Rectifier IRF7470
Power MOSFET
| Part No. | IRF7470 |
|---|---|
| Datasheet | IRF7470 Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Frequency DC-DC Converters with Synchronous Rectification l Lead-Free HEXFET® Power MOSFET VDSS RDS(on) max ID 40V 13mΩ 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current S 1 S 2 S 3 G 4 AA 8 D 7 D 6 D 5 D Top View SO-8ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Notes through are on page 8 Max. 40 ± 12 10 8.5 85 2.5 1.6 0.02 -55 to + 150 Units V V A W W W/°C °C Typ. ––– ––– Max. 20 50 Units °C/W 1 8/11/04 IRF7470PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
