International Rectifier IRF7471
Power MOSFET
| Part No. | IRF7471 |
|---|---|
| Datasheet | IRF7471 Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current IRF7471 HEXFET® Power MOSFET VDSS 40V RDS(on) max 13mΩ ID 10A S S S G 1 8 7 A A D D D D 2 3 6 4 5 T o p V ie w SO-8ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. 40 ± 20 10 8.3 83 2.5 1.6 0.02 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. ––– ––– Max. 20 50 Units °C/W Notes through are...
