IRF7484QPBF Datasheet PDF

APPLICATIONS

l Relay replacement l Anti-lock Braking System l Air Bag IRF7484QPbF HEXFET® Power MOSFET VDSS RDS(on) max (mW) ID Benefits l Advanced Process Technology l Ultra Low On-Resistance l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l RoHS Compliant (Halogen Free)

DESCRIPTION

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. 40V 10@VGS = 7.0V S1 S2 S3 G4 AA 8D 7D 6D 5D Top View 14A SO-8

ABSOLUTE MAXIMUM RATINGS

ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS EAS IAR EAR TJ, TSTG Parameter C...