IRF7484Q Datasheet PDF

APPLICATIONS

O O O Relay replacement Anti-lock Braking System Air Bag Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET® Power MOSFET IRF7484Q ID 14A VDSS RDS(on) max (mW) 40V 10@VGS = 7.0V Benefits O O O O S S 1 2 3 4 8 7 A A D D D D

DESCRIPTION

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S G 6 5 Top View SO-8

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS EAS IAR EAR TJ, TSTG Continuous Drain Current, VGS @ 10V Con...