IRF7484PBF Datasheet PDF

APPLICATIONS

l l l l Relay replacement Anti-lock Braking System Air Bag Lead-Free HEXFET® Power MOSFET VDSS RDS(on) max (mW) 40V 10@VGS = 7.0V ID 14A Benefits l l l l Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax S S 1 8 A A D D D D 2 7

DESCRIPTION

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S G 3 6 4 5 Top View SO-8

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS EAS IAR EAR TJ, TSTG Continuous Drain Current, VGS @ 10V...