International Rectifier IRF7494
HEXFET Power MOSFET
| Part No. | IRF7494 |
|---|---|
| Datasheet | IRF7494 Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
High frequency DC-DC converters VDSS 150V 44m:@VGS = 10V RDS(on) max ID 5.2A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8ABSOLUTE MAXIMUM RATINGS
Parameter VDS VGS ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 150 ± 20 5.2 3.7 42 3.0 0.02 3.0 -55 to + 175 150 Units V c A W W/°C V/ns °C Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and h Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) Typ. Max. 20 50 Units °C/W e ––– ––– Notes through are on page 8 1 01/28/03 03/11/03 IRF749...
