International Rectifier IRF7494PbF
Power MOSFET
| Part No. | IRF7494PbF |
|---|---|
| Datasheet | IRF7494PbF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High frequency DC-DC converters l Lead-Free PD - 95349C IRF7494PbF VDSS 150V HEXFET® Power MOSFET RDS(on) max ID 44mΩ@VGS = 10V 5.1A Benefits l Low Gate to Drain Charge to Reduce Switching Losses S l Fully Characterized Capacitance Including S Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage S G and Current 18 27 36 45 Top View AA D D D D SO-8ABSOLUTE MAXIMUM RATINGS
Parameter VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current Maximum Power Dissipation dv/dt TJ TSTG Linear Derating Factor hPeak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Thermal Resistance Parameter iRθJL Junction-to-Drain Lead eRθJA Junction-to-Ambient (PCB Mount) Max. 150 ± 20 5.1 4.0 40 2.5 0.02 33 -55 to + 150 Typ. ––– ––– Max. 20 50 Units V A W W/°C V/ns °C Units °C/W Notes through are on page 8 1 10/15/09 IRF7494PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
