International Rectifier IRF7811
The IRF7809/IRF7811 employs a newCopperStrapTM interconnect technology pioneered by International VDS IRF7809 30V IRF7811 28V Rectifier to dramatically improve the electrial & thermal resistance contribution of the package. The new CopperStrap SO-8 power MOSFETs are capable of current ratings over 17A and power dissipation of 3.5W @ 25°C ambient conditions, thereby reducing the need for paralleled devices, improving efficiency and RDS(on) QG Qsw Q oss 7.5 mΩ 77.5 nC 23.9 nC 30 nC 11 mΩ 23 nC 7 nC 31 nC reliability and reducing board space.| Part No. | IRF7811 |
|---|---|
| Datasheet | IRF7811 Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET |
| Buy | Stock & Price |
DESCRIPTION
These new devices employ advanced HEXFET® Power SO-8 Top View MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of mobile microprocessors. DEVICE RATINGSABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current T = 25°C A TL = 90°C Power Dissipation T = 25°C A TL = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead Symbol VDS VGS I D IDM P D TJ, TSTG I S ISM RθJA RθJL IRF7809 IRF7811 30 28 ±12 17.6 14 16.3 13 100 100 3.5 3.0 –55 to 150 2.5 2.5 50 50 Max. 35 20 Units V A W °C A Units °C/W °C/W 1 1/19/00 IRF7809/IRF7811ELECTRICAL CHARACTERISTICS
Parameter IRF7809 IRF7811 Min Typ Max Min Ty...
