DESCRIPTION
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. HD-1 ABSOLUTE MAXIMUM RATINGS
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10 V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 0.35 0.22 2.8 1.0 0.0083 ±20 46 0.35 0.10 4.0 -55 to + 150 300 (1.6mm from case) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance RθJA Parameter Junction-to-Ambient Min. — Typ. — Max. Units 62 °C/W Revision 0 IRFD310 ELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
International Rectifier
