Intersil IRFD310
N-Channel Power MOSFET
FEATURES
● 0.4A, 400V● rDS(ON) = 3.600Ω
● Single Pulse Avalanche Energy Rated
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFD310 PACKAGE HEXDIP BRAND IRFD310 Symbol D NOTE: When ordering, use the entire part number. G S Packaging HEXDIP DRAIN GATE SOURCE 4-293 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFD310
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified IRFD310 400 400 0.4 1.6 ±20 1.0 0.008 45 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .