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IRFF130 Datasheet PDF

International Rectifier IRFF130

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance.
Part No. IRFF130
Datasheet IRFF130 Download
Manufacturer
International Rectifier
Description HEXFET TRANSISTORS
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IRFF130 datasheet page 1 preview

FEATURES

: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling

ABSOLUTE MAXIMUM RATINGS

ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight Units 8.0 5.0 A 32 25 W 0.20 W/°C ±20 V 75 mJ —A — mJ 5.5 V/ns -55 to 150 oC 300 (0.063 in. (1.6mm) from case for 10s) 0.98(typical) g For footnotes refer to the last page 1 01/22/01 IRFF130

ELECTRICAL CHARACTERISTICS

@ Tj = 25°C (Unless Otherwise Specified) BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) gfs IDSS Parameter Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-...
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