International Rectifier IRFF9130
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well-established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters.| Part No. | IRFF9130 |
|---|---|
| Datasheet | IRFF9130 Download |
| Manufacturer |  International Rectifier |
| Description | Repetitive Avalanche and dv/dt Rated Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Repetitive avalanche ratings● Dynamic dv/dt rating
● Hermetically sealed
● Simple drive requirements
● ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary
● BVDSS: -100V
● ID : -6.5A
● RDS(on),max : 0.30
● QG, max: 34.8nC
● REF: MIL-PRF-19500/564 Potential
APPLICATIONS
● DC-DC converter● Motor drives Product Validation TO-205AF / TO-39 Qualified to JANS screening flow according to MIL-PRF-19500 for space applications
DESCRIPTION
HEXFET POWER MOSFET technology is the key to IR HiRel’s advanced line of power MOSFET transistors. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Ordering Information Table 1 Ordering options Part number IRFF9130 JANS2N6849 JANTX2N6849 JANTXV2N6849 Package TO-205AF / TO-39 TO-205AF / TO-39 TO-205AF / TO-39 TO-205AF / TO-39 Screening Level COTS JANS JANTX JANTXV Please read the Important Notice and Warnings at the end of this document page 1 of 12 2024-12-06 IRFF9130 (JANS2N6849) Power MOSFET Thru-Hole (TO-205AF / TO-39) Table of contents Table of contentsFEATURES
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