IRFF9130 Datasheet | TT Electronics

P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 MOSFET Transistor in a Hermetic Metal TO-205AF Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications High Reliability and Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25°C ID IDM(1) Continuous Drain Current @ TC = 100°C Pulsed Drain Current Total Power Dissipation @ TC = 25°C Derate Above 25°C Junction Temperature Range Tstg Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 380µs, δ ≤ 2% (3) By Design Only, Not A Production Test. -100V ±20V -5.8A -3.7A -25A 20.833W 0.167W/°C -55 to +150°C -55 to +150°C Max. 6 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: +44 (0) 1455 556565 Fax: +44 (0) 1455 552612 Email: lutterworth.sales@ttelectronics. Website: http://ttelectronics. Semelab Document Number: DOC 3098 Issue: 3 Page: 1 of 3 P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols...